True-Hspice Device模型参考手册

snowwolfe

Table of Contents
6 A1 g* C4 u/ g/ T( h, x- k( OAudience ............................................................................................. iii
0 T2 \7 d" d6 p) h+ [( TRelated Documents ............................................................................. iii
( A3 K+ k1 ?1 V3 KConventions ........................................................................................ iv
) k6 b7 t9 V1 L+ ^, c2 r" a3 S" K9 yObtaining Customer Support .............................................................. vi
6 D( a$ S4 S% Q0 ?; C  X& c- {8 dOther Sources of Information ............................................................ vii
Revision History ............................................................................... viii
Chapter 1 - Overview of Models ..................................................................... 1-1
' M8 Y3 x/ |! ~% [% [# d( i" F( vUsing Models to Define Netlist Elements .............................................. 1-2
Supported Models for Specific Simulators ....................................... 1-2
. O1 z8 W3 g& u: N: W6 q& N' R& s2 D( BSelecting Models .............................................................................. 1-3
+ Y/ J/ O" K% V: [; f- U( z+ QExample ............................................................................................ 1-3
0 c0 B- _* n% |8 T+ B1 ZChapter 2 - Using Passive Device Models....................................................... 2-1
Resistor Device Model and Equations .................................................... 2-2
Wire RC Model ................................................................................. 2-2
: u0 O! S. o; E% Q! t( tResistor Model Equations ................................................................. 2-5
Capacitor Device Model and Equations ............................................... 2-10
Capacitance Model ......................................................................... 2-10
Capacitor Device Equations ........................................................... 2-11
Inductor Device Model and Equations ................................................. 2-14
4 m" p. s' W+ U' h" E6 e, g! d% dInductor Core Models ..................................................................... 2-15
Magnetic Core Element Outputs .................................................... 2-18
6 U8 F3 C  F0 @  t$ X; c: q# yInductor Device Equations ............................................................. 2-19
2 g! }( Q3 I9 o* _Jiles-Atherton Ferromagnetic Core Model ..................................... 2-21
Power Sources ....................................................................................... 2-30
Independent Sources ....................................................................... 2-30
, R- k# s3 v% P* }Controlled Sources .......................................................................... 2-33
% p9 k) d2 \; x# }Chapter 3 - Using Diodes ................................................................................. 3-1
& I4 }! X( Q, l& U, ^3 z( |8 A+ d% BDiode Types ............................................................................................ 3-2
9 h( ]  ~6 q7 _  ]7 k( Z+ W3 v* KUsing Diode Model Statements .............................................................. 3-3
) c, V: L6 x/ F& LSetting Control Options .................................................................... 3-3
8 ?% e# c% J1 N7 H) A5 _! |: r% f; ESpecifying Junction Diode Models ......................................................... 3-5
. B# d) J# L8 g# M% y' w6 s  kUsing the Junction Model Statement ................................................ 3-6
Using Junction Model Parameters .................................................... 3-7
Geometric Scaling for Diode Models ............................................. 3-13
Defining Diode Models ................................................................... 3-15
Determining Temperature Effects on Junction Diodes ................... 3-18
- ^( O5 f1 L4 t6 D  A, a: `  YUsing Junction Diode Equations ........................................................... 3-21
, H  p, R3 A4 ]# x+ b9 G# hUsing Junction DC Equations ......................................................... 3-22
Using Diode Capacitance Equations ............................................... 3-25
% X% q, i. l8 J3 m" x% f; f, Q7 yUsing Noise Equations .................................................................... 3-27
Temperature Compensation Equations ........................................... 3-28
Using the Junction Cap Model .............................................................. 3-32
7 e, j& N9 \( U( D% B) i4 LSetting Juncap Model Parameters ................................................... 3-33
Theory ............................................................................................. 3-33
  q  [3 u5 x! x* iJUNCAP Model Equations ............................................................. 3-38
Using the Fowler-Nordheim Diode ...................................................... 3-46
; J* k3 g0 m7 Z! gConverting National Semiconductor Models ........................................ 3-48
  u" `* V) Q; W! d: @Chapter 4 - Using BJT Models ........................................................................ 4-1
Using BJT Models .................................................................................. 4-2
3 ]) t2 m/ i' m8 s4 sSelecting Models ............................................................................... 4-2
* S9 Z9 I- p( k/ nBJT Model Statement ............................................................................. 4-4
Using BJT Basic Model Parameters ................................................. 4-5
Handling BJT Model Temperature Effects ..................................... 4-15
BJT Device Equivalent Circuits ............................................................ 4-21
' M3 @" B; g7 Z3 P4 h) R% uScaling ............................................................................................. 4-21
Understanding the BJT Current Convention ................................... 4-21
% c7 O8 s9 k2 _, AUsing BJT Equivalent Circuits ....................................................... 4-22
BJT Model Equations (NPN and PNP) ................................................. 4-30
Understanding Transistor Geometry in Substrate Diodes .............. 4-30
0 I- L. w! T  dUsing DC Model Equations ............................................................ 4-32
/ G/ s! S. X1 C& S( [* E5 x3 b0 w" _Using Substrate Current Equations ................................................. 4-33
Using Base Charge Equations ......................................................... 4-34
Using Variable Base Resistance Equations .................................... 4-35
Using BJT Capacitance Equations ........................................................ 4-36
Using Base-Emitter Capacitance Equations ................................... 4-36
  Q0 f  i3 M* N  @  i7 W0 IDetermining Base Collector Capacitance ....................................... 4-38
5 p: e6 B6 t2 O# OUsing Substrate Capacitance ........................................................... 4-40
Defining BJT Noise Equations ............................................................. 4-42
% e! g* G+ c5 _9 m6 C4 s: ^BJT Temperature Compensation Equations ......................................... 4-44
  r$ U5 n$ X* }7 B* x  ?+ s  `Using Energy Gap Temperature Equations .................................... 4-44
Saturation and Beta Temperature Equations, TLEV=0 or 2 ........... 4-44
) t3 a% u/ Q5 Q/ w8 p! oUsing Saturation and Temperature Equations, TLEV=1 ................ 4-46
4 L, q, m, M! ~' k; Z  @, m$ xUsing Saturation Temperature Equations, TLEV=3 ....................... 4-47
' V' |/ k6 m/ T$ {+ `6 ]0 o2 }* ~Using Capacitance Temperature Equations .................................... 4-49
Parasitic Resistor Temperature Equations ...................................... 4-51
. v0 ~- b8 u: a8 O# EUsing BJT Level=2 Temperature Equations .................................. 4-52
BJT Quasi-Saturation Model ................................................................ 4-53
  k2 H" J" ?6 U1 R" d; Q# j  |Using Epitaxial Current Source Iepi ............................................... 4-55
9 G6 j: _) l' ^0 ?8 f7 x4 `7 dEpitaxial Charge Storage Elements Ci and Cx ............................... 4-55
Converting National Semiconductor Models ........................................ 4-58
) F7 l+ M% N& E5 t: I2 \& A1 bVBIC Bipolar Transistor Model ........................................................... 4-60
Understanding the History of VBIC ............................................... 4-60
VBIC Parameters ............................................................................ 4-61
- d5 G5 s& ~( u- I7 Q; A( eNoise Analysis ................................................................................ 4-62
Level 6 Philips Bipolar Model (MEXTRAM Level 503) ..................... 4-71
5 x2 u# }: m' d5 ^+ cLevel 6 Element Syntax .................................................................. 4-71
Level 6 Model Parameters .............................................................. 4-72
, p! W8 F1 B/ C! Y" j2 t4 ~Level 6 Philips Bipolar Model (MEXTRAM Level 504) ..................... 4-78
Notes ............................................................................................... 4-79
Level 6 Model Parameters (504) ..................................................... 4-80
/ X1 i+ h* \) F" LLevel 8 HiCUM Model ......................................................................... 4-94
What is the HiCUM Model? ........................................................... 4-94
1 X" r. e; i. RHiCUM Model Advantages ............................................................ 4-94
Avant! HiCUM Model vs. Public HiCUM Model .......................... 4-96
4 C+ R) H% r' v; }Model Implementation .................................................................... 4-96
1 [2 E8 ~6 W- A# m' bInternal Transistors ......................................................................... 4-97
Level 9 VBIC99 Model ...................................................................... 4-110
- z7 T2 X- J$ sElement Syntax of BJT Level 9 .................................................... 4-110
& [/ D' b( y0 u1 iEffects of VBIC99 ........................................................................ 4-112
Model Implementation .................................................................. 4-112
; L. m) H: |5 D( }6 N$ r7 j, ~Example ........................................................................................ 4-119
; r/ B9 W" P9 H6 {VBIC99 Notes for HSPICE Users ................................................ 4-123
Level 10 Phillips MODELLA Bipolar Model .................................... 4-124
( R- d  t6 J5 ]8 _# kModel Parameters ......................................................................... 4-124
  R# J0 y( \& D4 C9 j& s) MEquivalent Circuits ........................................................................ 4-129
DC Operating Point Output .......................................................... 4-131
Model Equations ........................................................................... 4-132
Temperature Dependence of the Parameters ................................ 4-142
) c6 v7 u* R/ p6 c  {+ f: S8 PLevel 11 UCSD HBT Model .............................................................. 4-146
Using the UCSD HBT Model ....................................................... 4-146
3 a( R+ _" Z# Z+ c; s# zDescription of Parameters ............................................................. 4-147
1 H* }  i( L# T" q' P* C8 s/ v3 FModel Equations ........................................................................... 4-152
Equivalent Circuit ......................................................................... 4-163
Example Avant! True-Hspice Model Statement ........................... 4-165
6 I; z8 U9 r9 L' @9 v2 EChapter 5 - Using JFET and MESFET Models............................................. 5-1
Understanding JFETs .............................................................................. 5-2
1 B6 w/ H1 g( h( _) x  b+ NSpecifying a Model ................................................................................. 5-3
Understanding the Capacitor Model ....................................................... 5-5
Model Applications ........................................................................... 5-5
; ^: a. s8 V' R; p" g) A" lControl Options ................................................................................. 5-6
JFET and MESFET Equivalent Circuits ................................................. 5-7
, b( j$ t6 s- G/ z( R7 X( uScaling ............................................................................................... 5-7
, E4 U. G# E& G+ K! n# hUnderstanding JFET Current Convention ........................................ 5-7
JFET Equivalent Circuits .................................................................. 5-8
JFET and MESFET Model Statements ................................................. 5-13
* t. Q* j6 f0 t! TJFET and MESFET Model Parameters ........................................... 5-13
Gate Diode DC Parameters ............................................................. 5-15
* \8 J* w. k# s- hJFET and MESFET Capacitances ................................................... 5-25
Capacitance Comparison (CAPOP=1 and CAPOP=2) ................... 5-29
4 D! v+ n& q$ ]) B0 r4 |JFET and MESFET DC Equations ................................................. 5-31
JFET and MESFET Noise Models ....................................................... 5-35
0 ?' }0 c4 h( t3 b8 K3 YNoise Parameters ........................................................................... 5-35
: W/ F. p% j7 h# B. d5 R+ B" }Noise Equations .............................................................................. 5-35
Noise Summary Printout Definitions .............................................. 5-36
* z2 y0 p0 X1 _9 a$ ^% Q1 B" jJFET and MESFET Temperature Equations ........................................ 5-37
- J! W: {0 |5 KTemperature Compensation Equations ........................................... 5-40
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