True-Hspice Device模型参考手册

snowwolfe

Table of Contents
- z; x- F5 e) n& m2 L5 ]0 j5 CAudience ............................................................................................. iii
Related Documents ............................................................................. iii
- Z2 s0 h& D- F$ g, O. gConventions ........................................................................................ iv
1 Z3 B, M7 g$ p7 ?! u* KObtaining Customer Support .............................................................. vi
Other Sources of Information ............................................................ vii
' c) f) M7 X9 ^$ |- VRevision History ............................................................................... viii
- d+ k! ?$ v9 f1 q3 m) @; D4 tChapter 1 - Overview of Models ..................................................................... 1-1
7 s- J# H4 E7 Y& Y2 IUsing Models to Define Netlist Elements .............................................. 1-2
7 T' D! X, a3 k8 {/ RSupported Models for Specific Simulators ....................................... 1-2
Selecting Models .............................................................................. 1-3
# {1 `- ~4 l: }" O5 r$ vExample ............................................................................................ 1-3
1 E0 ~! L- F7 h; J; I( L+ x6 O+ }Chapter 2 - Using Passive Device Models....................................................... 2-1
- u0 n' z+ ^' G- \; O& h" E2 xResistor Device Model and Equations .................................................... 2-2
8 u2 u) E* p6 |  hWire RC Model ................................................................................. 2-2
Resistor Model Equations ................................................................. 2-5
Capacitor Device Model and Equations ............................................... 2-10
, m. q# k) f* H- _' }8 O; k3 K: ZCapacitance Model ......................................................................... 2-10
Capacitor Device Equations ........................................................... 2-11
' D2 g* O: f% D. `Inductor Device Model and Equations ................................................. 2-14
Inductor Core Models ..................................................................... 2-15
% D$ z  f7 Y, ^Magnetic Core Element Outputs .................................................... 2-18
: \" l  ~7 r- x, aInductor Device Equations ............................................................. 2-19
Jiles-Atherton Ferromagnetic Core Model ..................................... 2-21
Power Sources ....................................................................................... 2-30
Independent Sources ....................................................................... 2-30
( V: q( l, ?# R0 C  iControlled Sources .......................................................................... 2-33
Chapter 3 - Using Diodes ................................................................................. 3-1
Diode Types ............................................................................................ 3-2
3 n$ ^4 ?, \) `3 g1 \' ~Using Diode Model Statements .............................................................. 3-3
Setting Control Options .................................................................... 3-3
Specifying Junction Diode Models ......................................................... 3-5
Using the Junction Model Statement ................................................ 3-6
Using Junction Model Parameters .................................................... 3-7
9 }' S( d" `8 ]% K2 I/ jGeometric Scaling for Diode Models ............................................. 3-13
Defining Diode Models ................................................................... 3-15
6 T) j" G& l$ ?8 L! `/ cDetermining Temperature Effects on Junction Diodes ................... 3-18
Using Junction Diode Equations ........................................................... 3-21
( ?' I% C' }, R5 ZUsing Junction DC Equations ......................................................... 3-22
/ F" C& c5 M* N$ C5 G3 gUsing Diode Capacitance Equations ............................................... 3-25
Using Noise Equations .................................................................... 3-27
Temperature Compensation Equations ........................................... 3-28
Using the Junction Cap Model .............................................................. 3-32
" |  {9 Z% h* Y5 Z/ U  M* p" USetting Juncap Model Parameters ................................................... 3-33
Theory ............................................................................................. 3-33
JUNCAP Model Equations ............................................................. 3-38
Using the Fowler-Nordheim Diode ...................................................... 3-46
Converting National Semiconductor Models ........................................ 3-48
Chapter 4 - Using BJT Models ........................................................................ 4-1
Using BJT Models .................................................................................. 4-2
0 x! U! z$ h5 w3 S' \Selecting Models ............................................................................... 4-2
BJT Model Statement ............................................................................. 4-4
Using BJT Basic Model Parameters ................................................. 4-5
) O1 X* u! f+ |( I# N: k/ z, t  aHandling BJT Model Temperature Effects ..................................... 4-15
7 q& g+ O; C' j' d+ LBJT Device Equivalent Circuits ............................................................ 4-21
# |2 \- `$ Q" M  ?, U- TScaling ............................................................................................. 4-21
Understanding the BJT Current Convention ................................... 4-21
Using BJT Equivalent Circuits ....................................................... 4-22
BJT Model Equations (NPN and PNP) ................................................. 4-30
6 q3 r* O. X+ h4 `, m- W" IUnderstanding Transistor Geometry in Substrate Diodes .............. 4-30
Using DC Model Equations ............................................................ 4-32
( Z# p1 u/ C( H6 L8 wUsing Substrate Current Equations ................................................. 4-33
Using Base Charge Equations ......................................................... 4-34
' }  R: B& @3 t% ^9 b9 P2 mUsing Variable Base Resistance Equations .................................... 4-35
. u8 i% N( L0 @/ |$ B" f" cUsing BJT Capacitance Equations ........................................................ 4-36
# O/ n6 Q. U+ W! e( s/ S! vUsing Base-Emitter Capacitance Equations ................................... 4-36
Determining Base Collector Capacitance ....................................... 4-38
& S) A5 w. C0 h; c# K. c3 G7 l; \Using Substrate Capacitance ........................................................... 4-40
Defining BJT Noise Equations ............................................................. 4-42
BJT Temperature Compensation Equations ......................................... 4-44
2 O0 u3 L) N5 u; d. J! CUsing Energy Gap Temperature Equations .................................... 4-44
Saturation and Beta Temperature Equations, TLEV=0 or 2 ........... 4-44
6 U. v. Y# A7 x" u- j( [4 jUsing Saturation and Temperature Equations, TLEV=1 ................ 4-46
  l# I) f5 S6 }2 RUsing Saturation Temperature Equations, TLEV=3 ....................... 4-47
9 c) z" ?4 W& M) M/ Q( HUsing Capacitance Temperature Equations .................................... 4-49
Parasitic Resistor Temperature Equations ...................................... 4-51
Using BJT Level=2 Temperature Equations .................................. 4-52
BJT Quasi-Saturation Model ................................................................ 4-53
; F( H5 a( K4 h# r' [# CUsing Epitaxial Current Source Iepi ............................................... 4-55
Epitaxial Charge Storage Elements Ci and Cx ............................... 4-55
Converting National Semiconductor Models ........................................ 4-58
0 Y/ A+ f2 ~# CVBIC Bipolar Transistor Model ........................................................... 4-60
Understanding the History of VBIC ............................................... 4-60
$ r6 p5 B: _6 L- p0 o8 JVBIC Parameters ............................................................................ 4-61
- u2 W3 b6 f8 G4 C/ rNoise Analysis ................................................................................ 4-62
Level 6 Philips Bipolar Model (MEXTRAM Level 503) ..................... 4-71
Level 6 Element Syntax .................................................................. 4-71
Level 6 Model Parameters .............................................................. 4-72
! N5 N, U8 K4 u4 i' B' JLevel 6 Philips Bipolar Model (MEXTRAM Level 504) ..................... 4-78
Notes ............................................................................................... 4-79
Level 6 Model Parameters (504) ..................................................... 4-80
Level 8 HiCUM Model ......................................................................... 4-94
What is the HiCUM Model? ........................................................... 4-94
0 V6 G9 e9 X4 v3 [# PHiCUM Model Advantages ............................................................ 4-94
Avant! HiCUM Model vs. Public HiCUM Model .......................... 4-96
! L6 N) Q, m8 U4 Q  I# U, B3 pModel Implementation .................................................................... 4-96
& n! @- H  T# \. f0 G% ^5 p+ t$ fInternal Transistors ......................................................................... 4-97
  D6 Q# o  ~8 F+ GLevel 9 VBIC99 Model ...................................................................... 4-110
Element Syntax of BJT Level 9 .................................................... 4-110
) w# u/ l! t- _7 z0 e& L: gEffects of VBIC99 ........................................................................ 4-112
Model Implementation .................................................................. 4-112
Example ........................................................................................ 4-119
7 v* @  C# V0 P1 }! |. E2 O% |/ hVBIC99 Notes for HSPICE Users ................................................ 4-123
; P4 o8 P  Z4 O* p+ vLevel 10 Phillips MODELLA Bipolar Model .................................... 4-124
3 r$ t1 y% h; A, r; V- A6 ^8 BModel Parameters ......................................................................... 4-124
Equivalent Circuits ........................................................................ 4-129
DC Operating Point Output .......................................................... 4-131
Model Equations ........................................................................... 4-132
Temperature Dependence of the Parameters ................................ 4-142
; v% ?! x# P* S9 L1 V% q3 X& g% _Level 11 UCSD HBT Model .............................................................. 4-146
Using the UCSD HBT Model ....................................................... 4-146
" q  O3 Q; p1 Q) gDescription of Parameters ............................................................. 4-147
  B. g  [+ q! Y+ n4 K+ i4 q4 [5 vModel Equations ........................................................................... 4-152
$ z/ {7 [; R! r' P! V; {0 C& k* tEquivalent Circuit ......................................................................... 4-163
% V  W4 W2 A$ `! G, dExample Avant! True-Hspice Model Statement ........................... 4-165
- ~2 s( L% c; [6 O  b! a$ ^* ]Chapter 5 - Using JFET and MESFET Models............................................. 5-1
Understanding JFETs .............................................................................. 5-2
" q! P% o7 W1 n4 Z7 Q! E, SSpecifying a Model ................................................................................. 5-3
, p) s% |: c& c5 l1 [+ uUnderstanding the Capacitor Model ....................................................... 5-5
& ?, F3 F$ ~2 G8 Q  E/ v( J% HModel Applications ........................................................................... 5-5
Control Options ................................................................................. 5-6
JFET and MESFET Equivalent Circuits ................................................. 5-7
2 X: Z* Y/ w% D9 d) l( v" gScaling ............................................................................................... 5-7
# }" v1 G6 L8 v  h7 AUnderstanding JFET Current Convention ........................................ 5-7
JFET Equivalent Circuits .................................................................. 5-8
, v6 H9 g- Z2 |JFET and MESFET Model Statements ................................................. 5-13
JFET and MESFET Model Parameters ........................................... 5-13
Gate Diode DC Parameters ............................................................. 5-15
4 }6 ?7 u/ C: P; OJFET and MESFET Capacitances ................................................... 5-25
Capacitance Comparison (CAPOP=1 and CAPOP=2) ................... 5-29
9 a/ s; e$ ~; b) F! t; OJFET and MESFET DC Equations ................................................. 5-31
: q  W( e* i7 e; x- FJFET and MESFET Noise Models ....................................................... 5-35
Noise Parameters ........................................................................... 5-35
/ X8 |' @/ K! y! o* E6 P: INoise Equations .............................................................................. 5-35
Noise Summary Printout Definitions .............................................. 5-36
JFET and MESFET Temperature Equations ........................................ 5-37
+ W* W" d$ G; cTemperature Compensation Equations ........................................... 5-40
。。。。。。。。。。。
( x0 c  M7 i, M/ H2 I2 D

游客，如果您要查看本帖隐藏内容请回复

1 O' f" G' b( Y
) z" B7 P0 @" L$ ~' L$ H) B

狂想的旅程

xiexie lou zhu

Justinkunt

支持，頂一個

soda2010

xiexiele

superfect

好 啊。感谢啊

winstonguo

感激！

muzi820305

谢谢，学习中

kyang74

谢谢~

pzh2006

好东西

andy.wei

谢谢分享

zl0721

kan kan

Colin_Zhou

thanks a lot ,very good materials

ssping

先下了，谢谢！努力学习

shuaiwang

谢谢

灯火枫桥

谢谢啊！

狂想的旅程

好资料