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網絡上找到的) r& y5 Q4 G% N( |% l
6 d8 P( m1 Q1 |9 u4 p0 }7 ]" g8 i* lm386 subcircuit model follows:
: Z$ \* ~3 ]+ z6 u: G% k% U5 w 1 ?) L- } p% |; b5 G
************************************original* IC pins: 2 3 7 1 8 5 6 42 z+ F1 T1 D* B3 I
* IC pins: 1 2 3 4 5 6 7 88 @- l" l3 ^- j8 V
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9 E1 F% g) P" @) L1 M.subckt lm386 g1 inn inp gnd out vs byp g8
6 z$ A' E t3 I2 w5 ~! u+ `* Y$ e( ]************************************original*.subckt lm386 inn inp byp g1 g8 out vs gnd( v a9 q* }/ _0 v q9 m
?# x3 [/ M- L) l" O( e5 G3 P
* input emitter-follower buffers:
9 K; F" \: P# h/ w + I; b3 q: m$ h4 K+ a
q1 gnd inn 10011 ddpnp
% f" J" B" d2 B# B' Dr1 inn gnd 50k
6 z$ h# `2 i3 ?, y/ i3 Rq2 gnd inp 10012 ddpnp6 T, C6 l( t% G; s3 m: a
r2 inp gnd 50k
1 u2 Y( m; i, s1 Q$ O
/ N3 [- x0 N6 `- M7 v$ |: r; \* differential input stage, gain-setting
, e. P- u2 L) x* x* resistors, and internal feedback resistor:, k! M. y; {. S/ N( f" g% i, t0 w
- D# A, L7 x( c4 u( G* Z7 o5 dq3 10013 10011 10008 ddpnp$ S9 k( c1 _: Z. }! C' J/ T
q4 10014 10012 g1 ddpnp
7 @( h& i9 R4 Dr3 vs byp 15k
/ o, ^9 c, |% R% z2 b+ j4 Pr4 byp 10008 15k% q2 }$ b$ n) w( j
r5 10008 g8 150
8 }+ ?) R' b4 p- y5 H0 X; ^( Xr6 g8 g1 1.35k! H9 X4 z( ~! _* I+ \
r7 g1 out 15k& m0 x. ?$ c4 n0 r0 A& T6 p/ O
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* input stage current mirror:- M$ d0 u; X- Z$ f$ }$ ]
% o& v/ I2 d9 q% o7 a b8 t1 {q5 10013 10013 gnd ddnpn
; b# n% o, q* k* i" L+ Gq6 10014 10013 gnd ddnpn1 a$ Q& b. f" J3 m1 \
9 z" ~0 n7 y& o' ^' E4 m
* voltage gain stage & rolloff cap:6 X- Q9 ^! Z$ o6 Y
; }9 J. F; ^8 N" M2 f0 V- Vq7 10017 10014 gnd ddnpn% l3 u) Z( x9 Q
c1 10014 10017 15pf- f7 U5 j r1 D- z
4 v( M; P! F9 a* \" ]4 P
* current mirror source for gain stage:/ E( f _# l. F# M+ I" b
3 @5 [$ s- B, U7 E
i1 10002 vs dc 5m' {+ q' N1 {, a
q8 10004 10002 vs ddpnp
2 B) ~, e. T. V0 }& E# u, Q* Lq9 10002 10002 vs ddpnp
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* Sziklai-connected push-pull output stage:5 `; |' d. R" ^- D/ t
7 \! B& T9 U3 [/ H, O! Xq10 10018 10017 out ddpnp, |! B* j& S( ]) f0 x, ^/ S) w
q11 10004 10004 10009 ddnpn 100
. o/ w* @. d* Wq12 10009 10009 10017 ddnpn 100
) G1 T* w a* R2 K' ]q13 vs 10004 out ddnpn 1005 z+ D/ k* @! U' o* W4 R P
q14 out 10018 gnd ddnpn 1005 O9 f: y' [! b: Y! O0 A2 I. Q
& H/ q: Y* O) D" P* generic transistor models generated2 t- X- c) x. ^% {' D7 I
* with MicroSim's PARTs utility, using) M2 m q+ s& q4 Z1 b, F
* default parameters except Bf:, \9 X1 M4 ]. G! a
7 i) Z9 c) T+ d. a.model ddnpn NPN(Is=10f Xti=3 Eg=1.11 Vaf=1000 P9 @. F' x2 o5 J5 Z
+ Bf=400 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100! v& Q- {' P" P2 s# k" q" ? F
+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333. t3 q4 ?2 l' w1 z, |, C
+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n, `: e [* r/ Q* }
+ Tf=1n Itf=1 Xtf=0 Vtf=10)7 p/ q5 M: a3 v5 |0 Q
7 d% ^+ j* Y+ p7 P7 Y* \# j% ]
.model ddpnp PNP(Is=10f Xti=3 Eg=1.11 Vaf=100
, Y7 S& c+ h3 j( q+ Bf=200 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100
# y' C& P6 Z1 c1 ]; `, B9 m5 T+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333
( P8 c1 B5 F3 [" S+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
2 V: K/ p' N7 q, V. z+ Tf=1n Itf=1 Xtf=0 Vtf=10)
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) g& c* M! q3 ^.ends
' B8 {" S( {/ M& A$ H+ m9 s*----------end of subcircuit model----------- |
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