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網絡上找到的1 X/ z5 h+ ~7 F) i8 B
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* lm386 subcircuit model follows:
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! B( D/ L, d: t/ T************************************original* IC pins: 2 3 7 1 8 5 6 4
+ ]/ N2 t3 S; U o; M/ J& S/ p* j* IC pins: 1 2 3 4 5 6 7 8
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.subckt lm386 g1 inn inp gnd out vs byp g80 h" H7 w- r; N" j8 U% ^ P) |
************************************original*.subckt lm386 inn inp byp g1 g8 out vs gnd/ z' l: x) U% t* l$ O/ P
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* input emitter-follower buffers:; r6 [7 N& h* e& c# d- X
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q1 gnd inn 10011 ddpnp+ `7 @% g) x; I9 f
r1 inn gnd 50k# U! e6 c. W& P; j2 V3 G" u0 S6 @
q2 gnd inp 10012 ddpnp1 t+ X, F! X( r4 }% A
r2 inp gnd 50k1 G: m0 E0 h* W# M
s8 o0 V% U# u9 j3 M0 w* differential input stage, gain-setting
' R: c6 O2 u0 b g* resistors, and internal feedback resistor:5 ]# Q! h: ]3 k$ s5 T0 B) \' {/ z5 @
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q3 10013 10011 10008 ddpnp8 A( b6 a: K' r; N5 l2 \
q4 10014 10012 g1 ddpnp
1 N u5 h( s# e4 nr3 vs byp 15k
. q: p2 F& V+ {* p' Q. N' m2 Gr4 byp 10008 15k
- a" E' S3 D) K7 F O) V7 C& @- rr5 10008 g8 150
0 _2 D1 l; S) X# Wr6 g8 g1 1.35k
* n# `$ K6 i. |4 ~2 `r7 g1 out 15k
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1 x7 v4 J; c1 p* input stage current mirror:7 D* Y( X! [( B1 w V
2 V# Y6 I" ~& @) s, _$ B A
q5 10013 10013 gnd ddnpn
9 L9 f6 z7 `! j0 ? }. n" lq6 10014 10013 gnd ddnpn
5 n3 S2 L6 l; e0 ?. d$ ^ / s( N5 |' D) L4 F$ Z1 l
* voltage gain stage & rolloff cap:- m& A! H+ y/ @6 h% ]
9 O( k' E0 A5 V+ e. uq7 10017 10014 gnd ddnpn1 D5 N3 b% [3 t f7 Q+ G
c1 10014 10017 15pf c. z+ E% R8 u5 |: Z! N
: `- d6 k3 V# a, Y. I# O
* current mirror source for gain stage:
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- c; a7 \+ A& l$ ^$ {. o$ G' V5 V2 s2 Ji1 10002 vs dc 5m
3 \- x1 c+ o) i9 g5 C B: Vq8 10004 10002 vs ddpnp
. X. c' d/ h* d; T( pq9 10002 10002 vs ddpnp3 X2 }1 f/ e8 k2 v
8 }/ T+ Q4 v( }* Sziklai-connected push-pull output stage:
8 G0 N( G6 b6 L0 {$ @! p6 D$ D % A; o/ u1 b0 J5 ]" A# A* O
q10 10018 10017 out ddpnp
7 F: \/ z4 d, _" U: b! U1 V( Yq11 10004 10004 10009 ddnpn 100
+ Q! }- l# Q8 uq12 10009 10009 10017 ddnpn 100
! c& l2 [; t% r. H6 Z' ^q13 vs 10004 out ddnpn 100& M A8 G* @+ q8 f; s* c
q14 out 10018 gnd ddnpn 100
1 K' ^, ^- c2 S+ U7 c
4 d6 x2 \* O/ v ~* generic transistor models generated |, K% t8 B+ v. I- o. N
* with MicroSim's PARTs utility, using
6 [ F$ I+ ~1 i- F" Z* L. p a* default parameters except Bf:$ ~. w' P; |1 w/ p6 t; V0 b
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.model ddnpn NPN(Is=10f Xti=3 Eg=1.11 Vaf=100
; Z; `9 e& c/ g( T+ l+ Bf=400 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100
5 \* B' T+ l1 F& |4 y% ~: p, i7 W+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333
8 `8 v) d- T9 t+ o* g# T4 {+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
" ~# ?. _6 v. m, Y6 V6 g( I( w+ Tf=1n Itf=1 Xtf=0 Vtf=10)9 s. y5 I5 K# f9 ^; S# R; ?7 M* `
/ b( \! ~( l) T, C C.model ddpnp PNP(Is=10f Xti=3 Eg=1.11 Vaf=100
. S+ p1 F* D: G% C% L- B+ X+ Bf=200 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100
( \0 u, }3 R+ s/ S+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333: s |$ v* E# l, U7 k
+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n. o* P: L/ D, H$ V. j
+ Tf=1n Itf=1 Xtf=0 Vtf=10)
4 [$ W+ U8 j/ [/ E
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*----------end of subcircuit model----------- |
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