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也请教一下yuxuan51版主~~
9 G" r* Q- T7 u+ Q- ^" ?4 |; ?最大电流是根据芯片datasheet中的IDD计算的么?貌似很难找到计算目标阻抗的实例啊。。我列举点数据,能不能教大家算一下?
3 D& R* ^# M, h! dDDR3 DRAM datasheet 中$ ]8 R' i1 I+ r9 ^6 x' a
Parameter Symbol Max
6 x: ^+ E8 L8 Y, ?8 pOperating current (ACT-PRE) IDD0 65MA
) ^! H) m6 _% R. K9 C* rOperating current (ACT-READ-PRE) IDD1 80MA/ G3 ]0 z3 Z; Q. F/ m6 B* z0 b
Precharge power-down standby current IDD2 35MA7 q2 j& F8 T9 k) G# l: H
Precharge standby current IDD2N 45MA% M0 |* w* x. s1 Z
Precharge standby ODT current IDD2NT 45MA9 j$ U) h( a2 e, _9 m2 M0 _
Precharge quiet standby current IDD2Q 45MA
5 Z0 _5 X! |" O( O# wActive power-down current(Always fast exit) IDD3P 39MA
! i/ [9 o( g7 V1 T3 }Active standby current IDD3N 55MA. \2 }/ Z; U) D3 u2 Y4 `7 L
Operating current (Burst read operating) IDD4R 125MA+ S6 W+ S% { T: |9 p5 W8 D
Operating current (Burst write operating) IDD4W 130MA
" x. b1 x& B% x, Y% YBurst refresh current IDD5B 250MA. u J' D& E; A1 X' h) z
All bank interleave read current IDD7 210MA
. f6 d( ]* j3 |最大电流按250mA * 0.5 算??
* u! p+ F( M, z' B' R6 J9 C0 x* ]- ^另外,一条板子需要8个DRAM颗粒,这样的话是不是电流还要乘以8?0 }6 Q! j8 n* h' h! w5 B% ~
先谢谢~ |
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