節錄自 EE Times︰& H m6 g0 i+ M- }& B( {$ s& J* ~
The DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. - a% c- ^- t! s3 Y 6 D9 R+ c; l* j