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MCM and BGAs Characterization using Planar EM Simulation

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发表于 2015-9-23 21:04 | 只看该作者 |只看大图 回帖奖励 |倒序浏览 |阅读模式

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ABOUT THE AUTHOR
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Jim DeLap is an Applications Engineer for Agilent EEsof EDA. He has worked in the microwave and RF community for over 13 years, and has a Master's degree from the University of Virginia. Jim has specialized in high-frequency and millimeter-wave IC and module design with further emphasis on EM effects on ICs and packages.
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Higher levels of integration are the manufacturer's primary response to the demand for smaller and lower cost electronic products. While ICs are part of the solution for this higher circuit density, designers also use new circuit construction and packaging techniques. A Multi-Chip Module (MCM) combines multiple chips onto a common substrate with a single set of inputs and outputs. Multiple chips in the same module almost always require many more I/O pins; therefore, Ball Grid Array (BGA) mounting techniques were developed to accommodate the additional connections.
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At frequencies below 1 GHz, the performance of packaging methods is very well understood. However, many new wireless and wired communications systems operate at much higher frequencies, where implementation is not straightforward. At these microwave or near-microwave frequencies, the electromagnetic (EM) effects of vias, transmission lines, and the package-to-board interface are very important and designers must analyze these effects with appropriate EM tools.
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MCM and BGA Technology Overview) n3 b! ?6 C9 Z- W& Y/ K
MCMs are a type of package where multiple chips share the same substrate. The common substrate provides multiple layers for signal and power distribution, ground connections, and interconnection of common inputs and outputs. A simple example of a multi-chip module is a RAM SIMM or DIMM commonly used in computers. With multiple RAM chips mounted on the same board and using a common set of I/O lines, these modules not only save board real estate, they also integrate a single function into one module. Of course, MCMs are not limited to similar chips; you can put different chips that make up an entire functional block of a subsystem into an MCM.
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The increased number of connections needed for multiple chips requires new methods of attachment. Traditional IC packaging has a single chip bonded to a lead frame with pins along the outer edge. As more pins were needed, it became impractical to route signals to the outer edge of the IC. Engineers originally came up with the PGA (Pin Grid Array), a rectangular array of vertical pins which allowed a much higher density of interconnects than standard SIMMs, DIMMs, DIPs, and similar chip packages. However, with higher frequency clock signals, the pins present too much inductance to be useful. The BGA was then developed, using solder reflow technology to attach all the connections in a single operation. The balls also provide a means of matching the thermal coefficients of expansion between the MCM substrate material (typically ceramic) and the board.
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Simulation Issues for MCM Circuits
- v! q6 O: l6 z& Y: f& b+ Y5 YYou can characterize MCM packages as sheets of dielectric material with circuit traces and vias routed on, between, and through the dielectrics. This layered construction makes it possible for planar electromagnetic (EM) simulators to perform the analysis, instead of the much more complicated and slower three-dimensional EM simulator.
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Not all of the EM tools on the market can accurately predict the complete interaction between traces, vias, and interconnects. Many of them simply analyze traces using a two-dimensional cross-section solver that analyzes the dielectric layers and calculates transmission line characteristics along a critical network. This method typically uses a quasi-static approximation of Maxwell's equations, which is limited to lower frequencies where the physical size of the circuit is small compared to the wavelength of the circuit's operation.
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The most common method for complete analysis of larger circuits, and at higher frequencies, is the Method of Moments (MOM). This type of EM simulation is often referred to as 2.5D, with the extra half dimension indicating that the simulator can calculate currents in the z-direction (usually vias) as well as the x- and y-directions. Basically, a Method of Moments simulator includes both the dielectric layer stackup and the physical layout of the traces. The dielectric stackup is how the various dielectric layers are arranged, with their respective permittivities, to simulate a cross section of the circuit or package. Adding the metallization layers to the substrate structure, including metal conductivity and thickness parameters, completes the circuit definition.
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You have to either draw or import the physical layout to describe the circuit's metallization. The layout of the traces may be drawn using a simulator's layout tool, or they may use the simulation tool's capability to import from DXF, GDSII, and other common drawing formats. In some analysis tools, there is also a step to map the polygons that describe the trace metallization to the physical location of the metal patterns in the substrate stackup.
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Once you define the simulation problem with the physical structure and material characteristics, the layout can be discretized (divided into small sections) for calculation of currents and S-parameters. Since these tools implement a full-wave solution to Maxwell's equations, they include calculations for radiation effects, dielectric loss, and metallization loss, which are crucial to the high-frequency circuit simulation using these packages.

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As noted earlier, there are other tools that incorporate the full three-dimensional aspect of the problem by breaking up the volume of the model into 3D elements, applying boundary conditions, and solving Maxwell's equations for the electric field. These methods are time consuming, both for the creation of the model and in computation time. For most applications, a planar MOM solver is more than adequate. In the future, when MCM and BGA technology is used for even high frequencies"millimeter wave and up"you may need 3D solvers, but that point has not yet been reached.
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MCM Simulation Examples
! ]# u  }8 v, p" }3 M9 U4 rTo simulate MCMs and BGAs, the most important tasks are the definition of the dielectric stackup and the description of the three-dimensional structure in two-dimensional layers. The examples shown in this article are simulated using DuPont Low Temperature Co-fired Ceramic (LTCC) material systems, unless otherwise noted.[url=] [/url] The ceramic is the standard Green Tape 951, and the simulated metal systems are Au 5731.
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The first example covers a problem area in MCMs utilizing LTCC materials: poor adhesion between metal and ceramic. Some ceramic layers do not completely bond to the metal layers. Although there is progress toward solving this problem, some vendors of LTCC systems recommend (or require) the use of meshed, or grid type, ground and power planes to allow contact between adjacent ceramic layers for improved bonding. This means that the metal plane separating two ceramic layers cannot be solid. DuPont typically recommends 70 percent maximum coverage.

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However, the use of mesh ground planes presents several problems for high-frequency applications. The first is simply increased resistive losses for the ground currents when the layer is used as an RF ground. This obviously results in higher losses. The second problem, not as obvious, is related to the finite size of the mesh openings and the period at which they repeat. These physical factors can cause the grid to act as a filter, referred to as a photonic bandgap structure.[url=] [/url] [url=] [/url] From Reference [url=][/url] and the parameters of this example, the frequency range of this phenomenon is around 50 GHz, which you can generally neglect. Simulations of solid and meshed ground planes are shown inFigure 1 and Figure 2, with a graph comparing the results shown in Figure 3. The 2D layout of the mesh ground plane is shown inFigure 4 to illustrate how structures are drawn in a layout environment.

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Figure 3: A comparison of the S21 (loss) simulation results in a microstrip line with solid and mesh ground planes
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Figure 4: Layout of the mesh ground plane in two dimensions, showing the position of the microstrip line relative to the grid structure
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The dielectric stackup for this simple example consists of air for the upper boundary of the line, the strip of metallization, and the ceramic-substrate dielectric. The bottom boundary is the ground plane defined earlier in this article. All the MCM examples in this article are variations of this definition.

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The ground reference for the simulation stimulus requires special attention. First, if a solid ground plane is used, the stackup description defines the plane and you calculate the substrate functions with the assumption that the ground reference is an infinite, homogeneous ground plane. However, in the case of the mesh ground plane, you need an alternative ground reference, since the effects of the mesh "ground" must be part of the analysis. In most EM simulators, if a ground is not explicitly defined, the reference is assumed to be a sphere of infinite radius. The simulator used in these examples includes a ground reference port that allows an explicit definition of the ground state. This technique is also used in the next example, where the ground plane separates one mode of propagation from another defining the transition from microstrip to stripline.

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The routing of transmission lines under or around active devices is the subject of the next example. The structure we will analyze begins with a microstrip line on the top dielectric layer, followed by a plated-through via hole that forms the transition to a stripline on a buried layer, then back up to microstrip. A 3D view of the structure is shown in Figure 5 and the S-parameter simulation results are shown in Figure 6.
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Figure 6: S21 (loss) simulation results for the structure pictured inFigure 5
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Where the vias transition through a solid ground plane, there must be openings ("anti-pads") to prevent shorting to ground. Design guidelines for the substrate material will limit the size of these via hole openings, which are a minimum of 50 mils in the DuPont system. This guideline accounts for the shrinkage of the dielectric and metal tapes during the firing process, which is 12.7% in the x-y plane for the 951 system. If the openings are too small, there will not be adequate clearance for the via holes.
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Designers must also consider the number of layers through which the vias travel. If there are vias that extend all the way through the substrate and are attached to signal lines, we must be very careful that they do not act like open- or short-circuit stubs. This is especially true for very thick substrates with many layers. Fortunately, the LTCC processes have the flexibility to produce vias that extend only through the necessary layers. This is not always the case with conventional PCB processes.
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One advantage of the MCM methodology and LTCC implementation is the ability to incorporate passive components, which require additional structures for simulation using these planar EM simulators. The next two examples show simulations of a 3D inductor and a parallel-plate capacitor. The inductor is created in three dimensions, using the multi-layer media to reduce the x-y periphery that a single-layer or spiral inductor would need for the same inductance. Figure 7 shows the inductor model whileFigure 8 shows the inductance simulation results.

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Figure 8: Simulation results for the inductor shown in Figure 7

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For a capacitor, the plates are typically constructed as metal areas on adjacent layers with the ceramic dielectric layer between them. You can design integral capacitors using this technique for device matching, AC coupling, or even lumped-element filters. The capacitor structure and simulation results are shown in Figure 9and Figure 10 respectively.
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Figure 10: Simulation results for the capacitor shown in Figure 9

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The advantages of using MCMs with LTCC or other substrate media are clear. You can easily integrate multiple chips on the surface of the substrate, with signal routing and power/ground distribution that uses buried layers. These MCMs can also include passive elements for attenuation, matching or tuning. However, designers must remember that unexpected behavior at microwave frequencies is likely unless they accurately analyze these circuits using a planar electromagnetic simulator.

- g; x6 {5 z; q8 |! u7 BSimulation of BGA Connections
( n% }; t8 J& W! ^' IIn many cases, the BGA attachment method is used for MCM connection to the printed circuit board. The ball attachment method can vary, with balls usually soldered or brazed onto the package. The balls can also vary in size and pitch, but the smaller the ball, the higher the frequency at which the package can operate.$ M. u0 h2 n$ U7 {

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For BGA simulation, we can assume that a solder fillet will create a cylinder when the package is mounted onto a board. Since most EM tools can simulate vias, we can approximate the ball interconnection with a cylindrical shaped via. For RF signals, the high-frequency signal connection can be surrounded with ground balls. This is one technique to minimize radiation and confine electric currents, since it creates a pseudo-coaxial transition.

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An example of a typical microwave BGA is shown in Figure 11. This example uses an alumina package from Micro Substrate Corporation (Model 1MSC633Z). The company designed the package, which contains eight DC ports, to operate up to 31.5 GHz for the input and output transitions. Understanding the performance of the BGA interconnect is the most important aspect of this package at high frequencies, because the path length from the die to the mounting substrate adds inductance that can ruin the frequency response of a circuit mounted in the package. For simplicity, the simulation only examines the RF transition. The simulation results are shown in Figure 12, which also includes a comparison with measured performance.

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Figure 12: A comparison of simulated and measured insertion loss of a BGA soldered connection
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Simulating Bond-Wire Connections
/ A6 ?4 Y; H6 f: y. u$ Z7 D5 j: sThe final example shows how these tools can also be used to simulate bond wires to chips mounted on the top layer of the substrate. A 3D view of the example is shown in Figure 13. The figure shows a 96-pin BGA package with an IC mounted on top. For simulation, two layers above the substrate define the dielectric of the area surrounding the IC and the area surrounding the bond wires. The bond wires are simulated with a vertical via section from the IC pad, a horizontal trace to a point above the bond pad, and a vertical via down to the bond pad. While not precisely modeling the three-dimensional wire loop characteristics, this method of simulating wire bonds is a good approximation to about 20 GHz. The simulation results for line loss and crosstalk between two adjacent pins are shown in Figure 14.
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Figure 14: Results of the simulation for crosstalk between adjacent connections and insertion loss of a bond-wire connection
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Summary) L$ J, I7 }$ ?0 V: N" I! E, l
New computing and communication products continue to have increased packaging densities and higher frequencies of operation. To assure that a design will perform as designed, it is essential that designers consider electromagnetic effects. The examples presented in this article show how planar EM simulation tools can provide valid results without requiring the intensive computations and effort that full three-dimensional solvers require.- n. M1 b, {2 V! D9 x, x

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The simulations in this paper were performed using the Advanced Design System 2001's 2.5D Method of Moments solver, Momentum from Agilent EEsof EDA. For more information on BGA design or to download the ADS 2001 design file used in this article, visit www.agilent.com/eesof-eda.

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3 k5 _' ~. m# uAcknowledgements
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( H( M8 t; {) Z% ?% g& bThe author would like to thank Bob Griffin from Micro Substrates Corporation along with Joe Civello and Chris Mueth from Agilent Technologies." |# W6 G7 ]0 l5 ~5 L" s
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