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也请教一下yuxuan51版主~~
4 L3 q7 ]1 o% r! B5 Z最大电流是根据芯片datasheet中的IDD计算的么？貌似很难找到计算目标阻抗的实例啊。。我列举点数据，能不能教大家算一下？/ X6 G% ~; \; {* k# W# g n
DDR3 DRAM datasheet 中
* s3 O6 ]' z2 O& v+ e+ V" \ Parameter Symbol Max
; Z+ _, ?& N0 I9 v, k. vOperating current (ACT-PRE) IDD0 65MA
: D7 j% f K" G: ?# WOperating current (ACT-READ-PRE) IDD1 80MA/ r. n3 I5 d. x
Precharge power-down standby current IDD2 35MA, f5 a& B. I% U8 \2 v+ K0 N8 {' z
Precharge standby current IDD2N 45MA. @; Q5 N+ R) B& U7 t, @ a, L
Precharge standby ODT current IDD2NT 45MA, x: ?% e& v9 s" |" A* w* s! w
Precharge quiet standby current IDD2Q 45MA
% L! P( o, a) S0 k! q3 ?Active power-down current(Always fast exit) IDD3P 39MA0 }" p. t2 M0 {$ U
Active standby current IDD3N 55MA
# w7 t# e% m8 }3 Q# ^Operating current (Burst read operating) IDD4R 125MA
0 |) W6 Y q0 U& R6 q cOperating current (Burst write operating) IDD4W 130MA8 O: e6 `1 X$ T5 d8 I0 h9 E2 B2 a
Burst refresh current IDD5B 250MA. G/ }9 W. F0 s/ D8 ~
All bank interleave read current IDD7 210MA5 X; ?0 q, S% H2 {- \5 y* p6 A' l: e& C
最大电流按250mA * 0.5 算？？3 E' x$ v6 C8 B Q; x: S
另外，一条板子需要8个DRAM颗粒，这样的话是不是电流还要乘以8？% k: P$ }- Y8 @4 _. }
先谢谢~ |
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楼主: sunuy
/1 
发表于 2012-5-4 08:37
发表于 2012-5-4 09:02
