節錄自 EE Times︰ 2 c. ]* b1 g) t0 ?' d# [; |* ~" RThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. ( A1 Y. E- y9 J* ~# d3 Y# N/ E% }" F$ k* O# O' ]! D' g