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标题: True-Hspice Device模型参考手册 [打印本页]
作者: snowwolfe    时间: 2008-3-25 17:14
标题: True-Hspice Device模型参考手册
Table of Contents8 {# e9 t' ?8 k
Audience ............................................................................................. iii
& q  @% G2 d$ m" k' xRelated Documents ............................................................................. iii8 A, c0 Q, m5 K3 E
Conventions ........................................................................................ iv
+ |4 C: A- ^! SObtaining Customer Support .............................................................. vi. G, s  R0 [$ j& M, E. J
Other Sources of Information ............................................................ vii
4 i0 ^7 W& ~* z  G6 XRevision History ............................................................................... viii% F1 }! U* |* W- s# n) }1 k$ F
Chapter 1 - Overview of Models ..................................................................... 1-15 b7 p& N2 Z; W5 G& l/ k, q
Using Models to Define Netlist Elements .............................................. 1-2* o9 K7 R) e1 s
Supported Models for Specific Simulators ....................................... 1-22 w+ Y5 S" I! `6 C/ f
Selecting Models .............................................................................. 1-3
: F- @# Z- t+ t, G6 X: IExample ............................................................................................ 1-3
6 h& O* m. B# U" Y: PChapter 2 - Using Passive Device Models....................................................... 2-1' d% p0 g% T8 `2 j# G  V
Resistor Device Model and Equations .................................................... 2-2* F; Y, ?6 ^6 o$ G7 ?+ t8 \
Wire RC Model ................................................................................. 2-2- G/ ~. {2 x2 z. |( ?5 a# ^
Resistor Model Equations ................................................................. 2-5
: Z8 [) M, b" nCapacitor Device Model and Equations ............................................... 2-10; S8 n4 w& w' b* y" f
Capacitance Model ......................................................................... 2-10
- Q4 r8 r/ j4 p' dCapacitor Device Equations ........................................................... 2-11( Q; V3 r# T& w  B% X" V& @
Inductor Device Model and Equations ................................................. 2-14
7 ]6 y2 [) A; d+ m; H9 E* wInductor Core Models ..................................................................... 2-15+ A! q6 \$ y- w* O8 B  ]
Magnetic Core Element Outputs .................................................... 2-18
( ~, H8 }5 q: E- g% gInductor Device Equations ............................................................. 2-19
* G/ U' A9 E" `# X3 S) F" Q" B& iJiles-Atherton Ferromagnetic Core Model ..................................... 2-21
& f. _: O1 }. K3 V5 APower Sources ....................................................................................... 2-30
; Z! q  e) ?. L' ]Independent Sources ....................................................................... 2-30. i" b5 \# S; f4 |/ @' U
Controlled Sources .......................................................................... 2-33
5 Z8 P& @% h5 E- L8 _* AChapter 3 - Using Diodes ................................................................................. 3-1" {5 g' T  W7 j  f* i
Diode Types ............................................................................................ 3-2% {: Y! [( S+ \$ }6 k
Using Diode Model Statements .............................................................. 3-3$ e0 Y2 O- P" B- h. r
Setting Control Options .................................................................... 3-3" @  S3 @% D- p& |- v7 d) T
Specifying Junction Diode Models ......................................................... 3-5* [$ L6 \" b/ q' M- P& M' |( Q
Using the Junction Model Statement ................................................ 3-62 S( {) v9 \) K$ l+ w- g
Using Junction Model Parameters .................................................... 3-7" O0 Z, W" ^$ I! k9 |
Geometric Scaling for Diode Models ............................................. 3-13
6 U( C; e6 G) D% N2 @* GDefining Diode Models ................................................................... 3-15
) c3 \1 F# C- oDetermining Temperature Effects on Junction Diodes ................... 3-18% S( W: A" d* O+ f
Using Junction Diode Equations ........................................................... 3-21, n+ E/ l: O, }, k9 j
Using Junction DC Equations ......................................................... 3-22
% X' @5 C' {4 \# V$ iUsing Diode Capacitance Equations ............................................... 3-25% |  {& j0 }$ y( [1 K0 k
Using Noise Equations .................................................................... 3-279 u2 @" X2 e" H& c; a% K" U
Temperature Compensation Equations ........................................... 3-28
0 _" N- X4 L& Y7 Q- `# {Using the Junction Cap Model .............................................................. 3-32
7 U+ x; }9 x1 B; {2 d+ WSetting Juncap Model Parameters ................................................... 3-33
+ z7 Q  ^1 G" H* U8 C* \Theory ............................................................................................. 3-33
' @) W' V' F, E. |1 t, M! u- `JUNCAP Model Equations ............................................................. 3-38
. Q& x: f& }, t& ^Using the Fowler-Nordheim Diode ...................................................... 3-46! o' L6 c4 i' ~' [0 q, L% y
Converting National Semiconductor Models ........................................ 3-48! f# U1 X+ n. {2 o/ Y
Chapter 4 - Using BJT Models ........................................................................ 4-1
# p/ l& r/ m1 b( N3 U" a% ?Using BJT Models .................................................................................. 4-2& J4 z7 ^, S9 [+ S2 o' S1 a
Selecting Models ............................................................................... 4-2
$ a  V' o& V5 h' O) G9 H; hBJT Model Statement ............................................................................. 4-4. n. R* A4 s, j" i5 x# L9 J. D! |
Using BJT Basic Model Parameters ................................................. 4-5# F" b" c& ^. q" y# C1 [2 i
Handling BJT Model Temperature Effects ..................................... 4-15
  [2 Y( i1 q3 v" x; L1 GBJT Device Equivalent Circuits ............................................................ 4-21+ {7 T" A7 G- f. l$ Q' g9 b
Scaling ............................................................................................. 4-21
& K0 U2 G+ _. l5 s) L4 ~& BUnderstanding the BJT Current Convention ................................... 4-21
9 A7 p$ I/ g; `. I5 _Using BJT Equivalent Circuits ....................................................... 4-22
4 l6 y  ^; \) W* u  q; c$ c; YBJT Model Equations (NPN and PNP) ................................................. 4-30
! s2 i( o/ F' `: }Understanding Transistor Geometry in Substrate Diodes .............. 4-30
# P' b* A3 i, @; a7 dUsing DC Model Equations ............................................................ 4-327 r/ U' m+ K/ d/ V( S% c  b7 N1 c9 h
Using Substrate Current Equations ................................................. 4-33' a3 x$ ^" G4 E: p
Using Base Charge Equations ......................................................... 4-347 t9 d' A" N* s3 ~6 I! F' E" j* h9 }
Using Variable Base Resistance Equations .................................... 4-35
" T/ I7 K* k) x1 [) x  XUsing BJT Capacitance Equations ........................................................ 4-36
; H- j2 K4 \! S, `; P" zUsing Base-Emitter Capacitance Equations ................................... 4-36
4 q. ]' x: Y! Y8 E# V" DDetermining Base Collector Capacitance ....................................... 4-38
3 D* Z  Q2 x. OUsing Substrate Capacitance ........................................................... 4-40* }+ C2 J7 C9 j, j7 @% n, m
Defining BJT Noise Equations ............................................................. 4-42/ J& P2 ]' d6 p/ R) r  m5 ]
BJT Temperature Compensation Equations ......................................... 4-44
1 F' m  [% e7 k" W' k3 ^) a! [7 CUsing Energy Gap Temperature Equations .................................... 4-44
1 L( p  O6 N# d! {% U, b. B) k9 o! H% fSaturation and Beta Temperature Equations, TLEV=0 or 2 ........... 4-44
5 E9 [! P) {% qUsing Saturation and Temperature Equations, TLEV=1 ................ 4-469 n" x" C1 x9 j+ j/ `& F
Using Saturation Temperature Equations, TLEV=3 ....................... 4-47
6 W0 r; w% a1 q4 ]" `# UUsing Capacitance Temperature Equations .................................... 4-49
0 T. Q% |# v% R7 R8 DParasitic Resistor Temperature Equations ...................................... 4-51' [& h: C) e* h/ ?4 S4 g+ }# s
Using BJT Level=2 Temperature Equations .................................. 4-52) Z7 b/ f3 {5 f# A, [
BJT Quasi-Saturation Model ................................................................ 4-53/ L- ~5 ]# o& b/ s' k
Using Epitaxial Current Source Iepi ............................................... 4-555 a; ]; |& S+ _' C$ w, s4 T1 c
Epitaxial Charge Storage Elements Ci and Cx ............................... 4-55
) v' o7 s1 U+ G: I* L5 k5 C7 T8 ]Converting National Semiconductor Models ........................................ 4-58
7 R: F8 g4 _+ _) Y) D6 YVBIC Bipolar Transistor Model ........................................................... 4-60
3 w& X  W/ {# V9 Z: G- B2 `- ^Understanding the History of VBIC ............................................... 4-60
$ z: w8 A& P% m( y  y9 t6 ^, B, zVBIC Parameters ............................................................................ 4-61
- r9 l: X* i3 A7 g2 g  cNoise Analysis ................................................................................ 4-62
) O- k3 Z+ Y) }' F3 C5 O$ KLevel 6 Philips Bipolar Model (MEXTRAM Level 503) ..................... 4-71
* C! q  |! t  H; p8 BLevel 6 Element Syntax .................................................................. 4-71; O  I/ C/ \, O# x$ G3 ?- W( ?' N7 I
Level 6 Model Parameters .............................................................. 4-72
2 k6 F- ?; C; D. t9 sLevel 6 Philips Bipolar Model (MEXTRAM Level 504) ..................... 4-78
1 W+ d; y6 R$ I: a7 w+ tNotes ............................................................................................... 4-79
8 q" R  l. c5 i8 H" [1 GLevel 6 Model Parameters (504) ..................................................... 4-80
8 c" U! B4 q( `) ?2 PLevel 8 HiCUM Model ......................................................................... 4-94
8 P* E5 W, m3 K8 d6 b* {What is the HiCUM Model? ........................................................... 4-94# k# ~9 f9 z2 c) ]+ Q* J& G  }
HiCUM Model Advantages ............................................................ 4-94+ h( h9 h! j7 V
Avant! HiCUM Model vs. Public HiCUM Model .......................... 4-96: ]9 R2 ]* T, k" y
Model Implementation .................................................................... 4-96
" M) l! E/ i7 Q  ]& R6 gInternal Transistors ......................................................................... 4-97
1 Q2 F- i: d8 N4 A# R" {; ULevel 9 VBIC99 Model ...................................................................... 4-110
! a2 K4 M) d' R( s8 iElement Syntax of BJT Level 9 .................................................... 4-110/ h& e: V3 R' c- z" N" N. p3 ^
Effects of VBIC99 ........................................................................ 4-1122 S/ J, O5 P! U% c
Model Implementation .................................................................. 4-112; y$ N9 J7 k0 c8 r5 k
Example ........................................................................................ 4-119
5 z3 A# m6 u2 d$ \7 V4 pVBIC99 Notes for HSPICE Users ................................................ 4-1232 h4 x7 ~. ^! `# O7 d" ^9 `0 o* V
Level 10 Phillips MODELLA Bipolar Model .................................... 4-124
8 q+ E$ S4 ]9 UModel Parameters ......................................................................... 4-124
% v0 n4 u2 g* I3 HEquivalent Circuits ........................................................................ 4-129
) L! ~  t* b+ c2 g* oDC Operating Point Output .......................................................... 4-131
3 z4 R) h, o4 HModel Equations ........................................................................... 4-1325 Y$ b0 w6 U  t9 s, F) Z% ?7 D5 K! F3 ~
Temperature Dependence of the Parameters ................................ 4-142
; O0 J5 G2 ^2 a3 K! ]Level 11 UCSD HBT Model .............................................................. 4-1464 `9 |- Z0 R9 m# f
Using the UCSD HBT Model ....................................................... 4-146
) H- q. x8 J8 h1 O9 VDescription of Parameters ............................................................. 4-1475 e. I5 s$ ]! W7 ]9 F# c* o& F
Model Equations ........................................................................... 4-152
/ ^; y, n9 g' U$ I$ z; S8 Q+ nEquivalent Circuit ......................................................................... 4-163+ r4 e# a' J: v
Example Avant! True-Hspice Model Statement ........................... 4-165- F$ ~4 B3 F) |4 [7 l; R
Chapter 5 - Using JFET and MESFET Models............................................. 5-1& ^9 {8 ?# R* h$ o: H' ~' N: U
Understanding JFETs .............................................................................. 5-2
+ I  J, G/ ^) ?- m) r* u4 G0 \Specifying a Model ................................................................................. 5-3
: c" g* J- ]0 aUnderstanding the Capacitor Model ....................................................... 5-5- o0 Y7 O  H1 ?$ P, h+ V
Model Applications ........................................................................... 5-5
# g- ~  ?3 d2 R  z  y" s3 h( l) GControl Options ................................................................................. 5-6  h& c9 G3 s% h
JFET and MESFET Equivalent Circuits ................................................. 5-7
: m3 Y, ?; \! x4 H: eScaling ............................................................................................... 5-7
: }0 y' b, \# m6 Y5 f, M0 bUnderstanding JFET Current Convention ........................................ 5-7& ~. a- k3 v; @/ x3 W
JFET Equivalent Circuits .................................................................. 5-8
; S1 X: k  b% g- s* A/ ^0 X9 BJFET and MESFET Model Statements ................................................. 5-13# E1 ^9 \$ A: c+ V9 j9 n3 w8 M
JFET and MESFET Model Parameters ........................................... 5-13( G) W% b; _# A) M1 I
Gate Diode DC Parameters ............................................................. 5-15
4 n6 [& v# f; U! C2 jJFET and MESFET Capacitances ................................................... 5-25% H9 B' j7 D* ~6 f( v+ s- {( t
Capacitance Comparison (CAPOP=1 and CAPOP=2) ................... 5-29) c+ p9 ~  M% h8 U* h
JFET and MESFET DC Equations ................................................. 5-31
4 H( F" w& s' [9 A) T* @" gJFET and MESFET Noise Models ....................................................... 5-35& l& z1 B) r2 ]3 I0 Y. T/ l! K; F
Noise Parameters ........................................................................... 5-35& o. _4 E' I4 N) p8 s! x
Noise Equations .............................................................................. 5-35
6 y+ A3 J$ [3 f9 sNoise Summary Printout Definitions .............................................. 5-36# g8 y; w% e5 [* S, X
JFET and MESFET Temperature Equations ........................................ 5-37
  C5 x% {% N7 Z1 ]1 ?& G6 WTemperature Compensation Equations ........................................... 5-40
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作者: winstonguo    时间: 2009-4-18 17:20
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作者: Colin_Zhou    时间: 2012-8-8 16:18
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作者: 灯火枫桥    时间: 2015-4-18 17:03
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作者: 狂想的旅程    时间: 2018-1-28 23:03
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作者: 狂想的旅程    时间: 2018-1-28 23:06
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作者: Justinkunt    时间: 2018-3-16 21:55
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作者: claptrap    时间: 2018-3-29 09:43
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作者: helicopter    时间: 2018-4-8 10:59
谢谢分享



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