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也请教一下yuxuan51版主~~' {- L2 Y. J) g$ y$ @( W2 k8 E
最大电流是根据芯片datasheet中的IDD计算的么?貌似很难找到计算目标阻抗的实例啊。。我列举点数据,能不能教大家算一下?; I% X3 W# b# t# p
DDR3 DRAM datasheet 中1 O u6 X0 P3 T+ H" G
Parameter Symbol Max
) p' ~9 z5 |! a( NOperating current (ACT-PRE) IDD0 65MA8 P" i }9 j5 k( \, U
Operating current (ACT-READ-PRE) IDD1 80MA0 \: `$ z; h6 d9 t- y$ a; q
Precharge power-down standby current IDD2 35MA
# ?6 O9 z! U$ wPrecharge standby current IDD2N 45MA* `, D8 i; l% v, t( U. q
Precharge standby ODT current IDD2NT 45MA
4 V" B0 {1 ^; _6 p, p3 [Precharge quiet standby current IDD2Q 45MA! w) L5 _- o! F- C' J5 R0 @) d
Active power-down current(Always fast exit) IDD3P 39MA# ^. e" g3 V/ A- \, ]% [& B: T) z: k
Active standby current IDD3N 55MA
: t0 m! A9 X( |/ f: z7 i2 U- u2 w, Y$ }Operating current (Burst read operating) IDD4R 125MA
' S2 T8 o% @, o! x" R6 C) gOperating current (Burst write operating) IDD4W 130MA& l2 I# X; G6 k+ G3 O# ?- |
Burst refresh current IDD5B 250MA
1 t. s6 c. o# }6 GAll bank interleave read current IDD7 210MA
9 W4 {# f4 Z, i最大电流按250mA * 0.5 算??; A5 S* @+ H! y" s6 J9 s
另外,一条板子需要8个DRAM颗粒,这样的话是不是电流还要乘以8?# d! i: _7 ~/ F7 |( M; y1 @
先谢谢~ |
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