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1 逻辑电平的基本组成单元-三极管、MOS 管及其开关特性........................................... 53 |8 `; I9 E- g
1.1 半导体三极管及其开关特性..................................................................................... 5
' H/ _4 L0 H4 I1.2 MOS 管的开关特性......................................................................................................7! o+ |: p r1 }0 S7 d! W
2、逻辑电平简介.................................................................................................................... 85 g, Y3 Z9 @3 ~8 a/ X
3、TTL 器件和CMOS 器件的逻辑电平............................................................................ 107 V0 @4 }6 T& i, G& _8 ~
3.1:逻辑电平的一些概念............................................................................................... 10
+ ~1 L3 _+ A8 Q; V! R/ y) r3.2:常用的逻辑电平....................................................................................................... 11
6 d# a/ `$ P2 d( B+ ^( W3.3:TTL 和CMOS 的逻辑电平关系.................................................................................. 11
, u% I+ u# n6 x6 E$ ~4、TTL 和CMOS 逻辑器件.................................................................................................... 13' X; C& U4 z3 w! W/ h
4.1:TTL 和CMOS 器件的功能分类.................................................................................. 13& @+ c" y* `% M6 R
4.2:TTL 和MOS 逻辑器件的工艺分类特点....................................................................134 n2 M9 k. N' `/ ?" ~& F
4.3:TTL 和CMOS 逻辑器件的电平分类特点..................................................................13' W' f) M: i1 H1 M8 m( {' k9 z
4.4:包含特殊功能的逻辑器件....................................................................................... 149 A9 F; e5 q3 B5 f( n9 k
4.5:逻辑器件的使用指南............................................................................................... 15
$ d6 u. D1 d! B M2 H5、TTL、CMOS 器件的互连.................................................................................................. 16; R% h2 S- \( }1 N+ J4 i
5.1:器件的互连总则.......................................................................................................16
- ~) Q, _; L7 B* D4 K+ u( i( }5.2:5V TTL 门作驱动源..................................................................................................19
0 _' f! k8 `( [ w2 d% [+ p3 Y5.3:3.3V TTL/CMOS 门作驱动源..................................................................................... 19( K( d7 q; l% T/ E* Y) s- W
5.4:5V CMOS 门作驱动源................................................................................................ 19, ^7 X3 {5 V, x+ ?$ c' G
5.5:2.5V CMOS 逻辑电平的互连.................................................................................... 194 R' A) y# {; F+ s
6、ECL 器件的原理和特点................................................................................................... 20
# d5 f2 x {( F$ T( K9 s, V6.1:ECL 器件的原理........................................................................................................20) @8 u! ^8 _3 r' Y# M7 K8 _
6.2:ECL 电路的特性........................................................................................................213 Y6 j+ m& k5 P* m* [
6.3:ECL 器件的使用原则................................................................................................ 22
3 v4 u+ n3 s+ B" f4 K% a9 @7、GTL 器件的原理和特点................................................................................................... 235 k [6 o' V; M9 l1 O
7.1:GTL 器件的特点和电平............................................................................................ 23
2 R% d! a7 [/ E) C) X' w4 x7.2:GTL 信号的PCB 设计................................................................................................ 24
" g; w" d+ E: g5 h& m+ h" O7.3:GTL 信号的测试........................................................................................................25
; {! j4 s9 L. I7 {: } f7.4:GTL 信号的时序........................................................................................................25
* S/ r* L( N7 _( c+ F o8 HSTL 电平......................................................................................................................... 257 @' O: R# f; U0 P# Y3 N
8.1 基本定义..................................................................................................................... 259 V/ p9 P2 m4 K2 h2 V8 [4 u2 F
1.2 HSTL 分类.................................................................................................................... 26
5 m: H( F) A ^4 X2 J. \" b4 B8.3 HSTL 特点及SSTL .....................................................................................................26
3 e+ \* L; {6 v" O, A3 L- |. C9 PECL、LVPECL 电平........................................................................................................... 27& [0 Y% T& k W, N) J
9.1:PECL/LVPECL 器件的原理和特点............................................................................277 x: U+ ?6 d0 m. s: U/ n% T
9.2. PECL/LVPECL 电平输出结构................................................................................... 276 k1 {6 Z( P$ j5 W
9.3 PECL/LVPECL 信号的输入输出门特点: ..................................................................29
g) d3 a2 o, W9 ^10 CML 电平......................................................................................................................... 30 \: p% R3 ~6 Y& ?5 B2 y
10.1. CML 接口输出结构............................................................................................... 30
" w& ?- \7 z7 T4 r5 [6 E5 h8 J10.2 CML 接口输入结构...................................................................................................306 r8 N2 X2 m- z9 O: _
10.3 CML 电平的输出门和输入门的特点: ....................................................................31
( `4 r5 O- v$ l$ B- B# A/ f11. LVDS 器件的原理和特点.......................................................................................... 32
- k3 {, Z, B6 X- m11.1:LVDS 器件简介........................................................................................................32
2 B, ]& C: ?' p V6 ~6 L11.2 LVDS 器件的工作原理.............................................................................................. 339 I+ f3 W) n9 j
11.3 LVDS 输入输出结构.................................................................................................33, t, |. h" n7 W$ f
11.4 LVDS 电平的特点...................................................................................................35% L+ S, S6 }# h! ?5 B
12. CML LVPECL LVDS 简单比较及互连......................................................................... 35% X8 [9 N' C: @8 @! T' t
12.1 CML LVPECL LVDS 简单比较..............................................................................35
* b0 U0 A/ { W7 m2 S' b) T3 t12.2 CML LVPECL LVDS 的互连综述..........................................................................389 b* b, r/ H1 R2 q" L8 a |
12.3 LVPECL 的互连........................................................................................................39
' f) c5 n! _. y/ i) n. N! z12.4 LVDS 的互连............................................................................................................44
/ q+ w( {$ S+ s: n; S( M12.5 CML 的互连..............................................................................................................45' v' Y: c9 C- u3 f- y
附录:.................................................................................................................................... 477 a7 ?) V2 B. W/ O
附录1. 集成TTL 与非门电路、OC 门电路及其特性..................................................... 47
. o$ ~+ Z, |- ~7 m I. X' E( J, T4 K附录2. CMOS 门电路及其特点.................................................................................... 59# U) J j) q3 Q% E3 H# X
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