Tektronix 拟采用IBM SiGe 8HP技术推出30GHz 实时示波器

stupid

泰克公司日前宣布，其下一代、可扩展、高性能示波器平台将广泛采用IBM 8HP硅锗 (SiGe) 技术，再次证明其致力于帮助全球工程师加速未来设计方案的调试与测试工作。130纳米（nm）硅锗双极互补金属氧化物半导体(BiCMOS) foundry工艺提供了两倍于前代工艺技术的性能，能帮助推出实时带宽超过30 GHz的示波器产品。
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; k) R: {9 [+ f( J2 I3 ~“泰克公司与IBM拥有长期的合作创新历史，在我们的产品中采用SiGe技术使我们推出了一系列世界级的获奖仪器，并帮助解决了一些最迫切的客户挑战”，泰克公司高性能示波器总经理Brian Reich指出，“出色的SiGe技术性能，加上IBM稳健可靠的SiGe制造实力，这将使我们的下一代示波器采集性能超过30 GHz，从而满足计算/通信产业不断发展的客户需求。”

1998年，IBM 成为首个面向主流制造领域推出硅锗IC技术的公司。2000年，泰克公司宣布推出TDS7000系列实时示波器，这也是当时速度最快的商用示波器，采用的正是IBM的旗舰SiGe 5HP技术。目前，泰克公司继续采用IBM业界领先的IC技术，也就是其第四代SiGe 8HP技术。

5 {# t. K- e2 ^. ?SiGe半导体采用50年历史芯片产业中可靠性较高的成熟制造工艺，其性能水平可与磷化铟(InP) 和砷化镓 (GaAs) 等稀有材料技术相媲美。与其他技术不同的是，SiGe BiCMOS能在与标准CMOS相同的裸片上集成高速双极晶体管，从而打造出具有超高性能与高集成度的电路系统。正是这种组合优势使得泰克公司10年来不断推出特性丰富的高速数据采集系统。

5 o5 C' S8 t  m3 e" Y0 k* b3 y“近15年来，泰克公司同我们的工程师团队密切合作，全面发挥SiGe技术的潜力”，IBM创新副总裁Bernie Meyerson指出，“SiGe技术能继续提供新一代高性能测试仪器所需的性能。鉴于SiGe技术的优势，该技术显然仍是各种高速测试应用的首选半导体技术。”
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保护投资

过去10年来，泰克公司一直成功预见领先串行标准所需的带宽支持需求，并积极参与IEEE协会、PCI-SIG、SATA-IO和USDB-IF等标准化机构的工作。泰克公司高性能示波器投资保护计划（Tektronix Performance Oscilloscope Investment Protection Program）为客户提供了高性价比移植路径，可根据发展需求升级到更高性能的示波器。客户如感兴趣，请垂询泰克公司客户经理探讨未来移植计划。

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" T) p! X5 \* {% |; t3 z采用8HP SiGe技术的首批泰克公司产品预计将于2011年推出。
% I; g* G( o" Q. R- qTektronix Commits to 200 GHz SiGe Technology for High-Speed Oscilloscopes

IBM 8HP Silicon Germanium Technology Enables Future Tektronix Oscilloscope Performance Speed Increases Beyond 30 GHz

BEAVERTON, Ore., August 9, 2010 – Tektronix, Inc., the world's leading manufacturer of oscilloscopes, today announced that its next-generation, scalable, performance oscilloscope platform will make broad use of IBM 8HP silicon germanium (SiGe) technology. Tektronix demonstrates its commitment to help engineers around the world speed debug and test tomorrow's designs. The 130 nanometer (nm) SiGe bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology offers 2x performance over the previous generation — and targets delivery of oscilloscopes with real-time bandwidth beyond 30 GHz.

“Tektronix has a long history of co-innovation with IBM and the inclusion of SiGe technology in our products has enabled us to deliver a portfolio of world-class, award-winning instruments that help solve some of the most demanding customer challenges,” said Brian Reich, general manager, Performance Oscilloscopes, Tektronix. “SiGe’s performance and the reliability and stability ofIBM ’s SiGe manufacturing capability will enable our next generation oscilloscope to achieve greater than 30 GHz acquisition capability for growing customer needs in the computing/communications industries.“

In 1998, IBM became the first company to introduce silicon germanium IC technology into mainstream manufacturing.  By 2000, Tektronix announced the delivery of the TDS7000 Series real-time oscilloscopes, the fastest commercially available oscilloscopes at the time, powered by IBM's flagship SiGe 5HP technology.  Today, Tektronix continues to utilize industry-leading IC technology from IBM with its fourth-generation SiGe 8HP.

SiGe semiconductors leverage highly-reliable and mature fabrication processes associated with the 50-year-old silicon industry, but with performance levels comparable to that of exotic materials such as Indium Phosphide (InP) and Gallium Arsenide (GaAs).  Unlike those alternatives, SiGe BiCMOS provides access to high-speed bipolar transistors on the same die as standard CMOS, enabling a class of circuitry which marries extreme performance with large-scale integration.  It is this union which has allowed Tektronix to reliably deliver feature-rich, high-speed data acquisition systems for over a decade.

“For nearly 15 years, Tektronix has worked closely with our engineering team to fully realize the potential of SiGe technology,” said Bernie Meyerson, VP, Innovation, IBM. “SiGe continues to be capable of delivering the performance necessary for a new generation of high-performance test instrumentation. Given the advantages provided by SiGe, it clearly remains the semiconductor of choice for a wide range of high-speed test applications.”

Investment Protection

Over the past decade, Tektronix has consistently anticipated the proper levels of bandwidth support for the leading serial standards, and is an active participant in such bodies as the IEEE Society, PCI-SIG, SATA-IO and USDB-IF.  The Tektronix Performance Oscilloscope Investment Protection Program provides customers with a cost-effective migration path to higher-performance oscilloscopes as their needs evolve. If interested, customers are urged to contact their Tektronix Account Manager to discuss future migration plans.

Availability

Initial Tektronix product deployments using this 8HP SiGe technology are expected in 2011.

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IBM announces next generation silicon germanium technology

Cost effective, power efficient technology drives innovative new wireless applications and devices

# l1 Q6 e0 t0 bEast Fishkill and N.Y., August 5, 2005 -- IBM today announced the availability of its fourth generation silicon germanium foundry technology, named 8HP -- with over 2X performance of the previous generation. The new 130 nanometer (nm) silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology can reduce the cost of mobile consumer products, advance high-bandwidth wireless communications, and help enable innovative new applications such as collision-avoidance automobile radar.
9 H' T- [* T+ @8 C! K+ ~  h# WAlong with 8HP, IBM is offering a lower cost variation (8WL) specifically targeted at wireless applications that can enable longer battery life and increased functionality in cellular handsets in order to help proliferate wireless local area networking (Wi-Fi) and global positioning satellite (GPS) technology.
. ?" e$ J' F  r2 ^"Silicon germanium technology is increasingly influencing next generation consumer devices and applications," said Bernie Meyerson, Chief Technologist for Systems & hTechnology Group, IBM. "IBM introduced the technology in 1989 to allow chip designers to increase computer performance; over the years, SiGe revolutionized the wireless industry by providing a high volume Silicon-based technology. The fourth generation of SiGe will continue to enable wireless connectivity on an increasingly global scale."
0 T# n+ s2 ?' @0 @IBM was the first foundry in the world to offer SiGe BiCMOS technology and since 1995, has shipped hundreds of millions of SiGe devices. CMOS chips are the foundation for digital computing applications, while silicon germanium (SiGe) BiCMOS chips provide enhanced radio frequency communications and analog functions in addition to the core digital computing capabilities.
IBM's new 130nm SiGe BiCMOS technology's application to products includes:

• Emerging safety systems for automobiles, including radar at 24 GHz for blindside detection and at 77 GHz for collision warning or advanced cruise control.
• 60 GHz Wi-Fi chips, for next-generation wireless personal-area networks and backbone nets.
• Software defined radios for cellular handsets which convert signals from the antenna directly into a digital form. A single-chip can be applied across multiple standards and various global mobile networks to transmit voice, data, and video signals.
• High-speed A/D and D/A converters for data acquisition, direct-to-baseband radio receivers, signal synthesis, and more.

9 O. z/ `" C% b& \0 L"Tektronix has been a SiGe early access partner with IBM for nearly ten years, and was one of the earliest adopters of SiGe for its products. The inclusion of SiGe 5HP and 7HP technology in Tektronix' products has enabled a portfolio of world class, award winning products" said Dave Brown, Vice President, Central Engineering, Tektronix. "Our relationship with IBM has been successful due to the consistent quality of their technology models, processes and documentation as well as the quality of the people we work with."
) q5 o9 M0 {1 LAt 130 nanometers (or 130 billionths of a meter), IBM's new SiGe BiCMOS technology delivers higher performance, lower power and higher levels of integration than current 180nm SiGe offerings. The technology maintains compatibility with IBM's application specific integrated circuit (ASIC) technology platform, enabling foundry clients to port a wide range of intellectual property circuit blocks and standard cell library elements. The 130nm foundry platform also includes an RF CMOS technology option, giving IBM foundry customers a broad range of technology choices for RF and mixed-signal applications.
7 v* h- S$ t/ ]) m$ [0 {( M% w9 O"Sierra Monolithics has selected IBM's SiGe8HP technology for demanding applications such as highly-integrated ultra-high-speed fiber optic components, high performance data converters and 60GHz broadband wireless transceivers," said Charles Harper, chairman, Sierra Monolithics. "IBM leads the industry in SiGe technology which enables our designers to get to market first with products of unprecedented performance. We are excited about the new performance regimes and application spaces that we can go after with this next generation."
Additional technical specifics include:
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• 130nm Lithography based SiGe BiCMOS
• Advanced SiGe NPNs, Emitter width= 120nm, Ft = 200 GHz (8HP), Ft=100 GHz (8WL)
• 130nm CMOS FETs, 1.5 / 2.5v
• Copper Global Wiring Levels + Thick Aluminum Top Level Metal
• Full Suite of Passives-Resistors, Varactors, MOS and MIM Capacitors, High Q Inductors
• Process Design Kits featuring precision RF device models

wakinoda

tek还在守硅锗半导体。。。

stupid

不是人人都有InP的。